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SmCo5硬磁薄膜的制备研究
引用本文:雷勇,代波,邵晓萍.SmCo5硬磁薄膜的制备研究[J].四川师范大学学报(自然科学版),2012(1):105-108.
作者姓名:雷勇  代波  邵晓萍
作者单位:西南科技大学材料科学与工程学院
基金项目:国家自然科学基金(10704061)资助项目
摘    要:以Cr层为底层和保护层,采用直流共溅射的方法在Si基片上制备了Cr(80 nm)/SmCo5(300nm)/Cr(8 nm)薄膜,并对样品进行550℃保温30 min的退火,然后分别利用EDX射线能谱仪、X射线衍射仪、原子力显微镜、振动样品磁强计分析研究了退火前后SmCo5薄膜样品的成分、结构、表面形貌、磁学性能及其变化规律.结果表明:在10-4Pa真空环境下,SmCo5薄膜在550℃退火,保温30 min后具有较好的硬磁性能,矫顽力Hc为1 738 Oe.

关 键 词:SmCo5薄膜  共溅射  退火温度  矫顽力

Preparations and Studies of the SmCo5 Hard Magnetic Films
LEI Yong,DAI Bo,SHAO Xiao-ping.Preparations and Studies of the SmCo5 Hard Magnetic Films[J].Journal of Sichuan Normal University(Natural Science),2012(1):105-108.
Authors:LEI Yong  DAI Bo  SHAO Xiao-ping
Affiliation:(School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621000,Sichuan)
Abstract:With the Cr layer as an underlayer and a caplayer,SmCo5 thin films were prepared on the silicon in DC co-sputtering,which had been annealed at different temperatures.Then the samples’ structures,compositions,and magnetic properties were characterized.The results show that after being annealed at 550 ℃ for 30 min the samples had preferable hard magnetic properties and the coercively about 1 738 Oe.
Keywords:SmCo5 thin film  co-sputtering  annealing temperature  coercively
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