Intermetallic compounds formed at the interface between liquid indium and copper substrates |
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Authors: | C L Yu S S Wang T H Chuang |
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Affiliation: | (1) Institute of Materials Science and Engineering, National Taiwan University, 106 Taipei, Taiwan, Republic of China |
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Abstract: | The interfacial reactions between liquid In and Cu substrates at temperatures ranging from 175°C to 400°C are investigated
for the applications in bonding recycled sputtering targets to their backing plates. Experimental results show that a scallop-shaped
Cu16In9 intermetallic compound is found at the Cu/In interface after solder reactions at temperatures above 300°C. A double-layer
structure of intermetallic compounds containing scallop-shaped Cu11In9 and continuous CuIn is observed after the Cu/In interfacial reaction at temperatures below 300°C. The growth of all these
intermetallic compounds follows the parabolic law, which implies that the growth is diffusion-controlled. The activation energies
for the growth of Cu16In9, Cu11In9, and CuIn intermetallic compounds calculated from the Arrhenius plot of growth reaction constants are 59.5, 16.9, and 23.5
kJ/mole, respectively. |
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Keywords: | Cu/In interface soldering reaction intermetallic compound |
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