GaAs外延层蒸镀Cr和Au膜制作欧姆接触工艺

目前国内外在各种金属上电镀、蒸镀Cr或Cr、Au,是因为Cr耐磨损、抗腐蚀,与稀酸作用缓慢,与被镀件结合力强。有力地保护被镀件,提高被镀件的使用寿命。外延后的GaAs衬底解理成激光器之前,要进行光刻,把镀在P型GaAs外延片刻沟糟处的Cr去掉。本文介绍在GaAs激光器的P型外延层上蒸镀Cr和Au的工艺及去除Cr的新工艺。

A Technigue of Making Ohmic Contact with Cr and Au PIating Evaporated on GaAs Epilayer

t present Cr or Cr,Au platings are formed on metal workpieces electicall or by evaporation at home and abroad,as Cr is resistance to corrosion,wear and tear resistance,reacting slowly with dilute acids,and having a strong adhesive force with the workpiece on which it is formed.So that the workpiece can be well protected,thus extend the life time of the worpiece. Before the epitaxial GaAs wafers being cleaved into lasers,the wafers should be photoetched.Up to now,there has no reports on how to removed the Cr on the channels on the epitaxial GaAs. This paper presents the Cr,Au evaporating technotogy on the epitaxialwafers and the new Cr removing technology.