Driving source-line cell architecture for sub-1-V high-speedlow-power applications |
| |
Authors: | Mizuno H Nagano T |
| |
Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
| |
Abstract: | A novel SRAM cell architecture for sub-1-V high-speed operation is proposed that uses neither low-Vth MOSFETs nor modified cell layout patterns. A source-line, connected to the source terminals of the driver MOSFETs is controlled so that it is negative and floating in the read and write cycles, respectively. This improved the bit-line access time by 1/4-1/2 at supply voltages of 0.5-1.0 V. Limiting the bit-line swing reduces by 1/10 the writing power needed to charge them and allows faster write-recovery, as well. The achievability of low-power 100-MHz operation over a wide range of supply voltages is demonstrated |
| |
Keywords: | |
|
|