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Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates |
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| Authors: | Jae-Hyun Ryou Russell D. Dupuis C. V. Reddy Venkatesh Narayanamurti David T. Mathes Robert Hull Alexander Mintairov James L. Merz |
| Affiliation: | (1) Microelectronics Research Center, The University of Texas at Austin, 78758 Austin, TX, USA;(2) Gordon McKay Laboratory of Applied Sciences, Harvard University, 02138 Cambridge, MA, USA;(3) Department of Materials Science and Engineering, The University of Virginia, 22906 Charlottesville, VA, USA;(4) Department of Electrical Engineering, University of Notre Dame, 46556 Notre Dame, IN, USA |
| Abstract: | We report the characteristics of InP self-assembled quantum dots embedded in In0.5Al0.5P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free “coherent” regions with an average size of ∼20 nm (height) and a density of ∼1.5 × 108 mm−2. These InP quantum dots have a broad range of luminescence corresponding to red or organge in the visible spectrum. |
| Keywords: | InP self-assembled quantum dots islands metalorganic chemical vapor deposition atomic force microscopy photoluminescence transmission electron microscopy |
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