| 槽栅MOSHEMT研制与特性分析 |
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| 引用本文： | 王冲,马晓华,冯倩,郝跃,张进城,毛维.槽栅MOSHEMT研制与特性分析[J].半导体学报,2009,30(5):054002-4. |
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| 作者姓名： | 王冲 马晓华 冯倩 郝跃 张进城 毛维 |
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| 作者单位： | Laboratory;Wide;Band-Gap;Semiconductor;Materials;Devices;School;Microelectronics;Xidian;University; |
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| 摘 要： | An A1GaN/GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate. The device, which has a gate length of 1μm and a source-drain distance of 4μm, exhibits a maximum drain current density of 684mA/mrn at Vgs = 4V with an extrinsic transconductance of 219 mS/mm. This is 24.3% higher than the transconductance of conventional A1GaN/GaN HEMTs. The cut-off frequency and the maximum frequency of oscillation are 9.2 GHz and 14.1 GHz, respectively. Furthermore, the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.
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| 关 键 词： | MOS晶体管 HEMT器件 最高振荡频率 蓝宝石衬底 漏电流密度 肖特基接触 截止频率 泄漏电流 |
Development and characteristics analysis of recessed-gate MOS HEMT |
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| Wang Chong,Ma Xiaohu,Feng Qian,Hao Yue,Zhang Jincheng and Mao Wei.Development and characteristics analysis of recessed-gate MOS HEMT[J].Chinese Journal of Semiconductors,2009,30(5):054002-4. |
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| Authors: | Wang Chong Ma Xiaohu Feng Qian Hao Yue Zhang Jincheng and Mao Wei |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | high electron mobility transistors A1GaN/GaN recessed-gate dielectric gate |
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| Keywords: | high electron mobility transistors AlGaN/GaN recessed-gate dielectric gate |
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