| 半导体器件与工艺综合 |
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| 引用本文： | 鲁勇,谢晓峰,张文俊,杨之廉.半导体器件与工艺综合[J].半导体学报,2002,23(7):772-776. |
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| 作者姓名： | 鲁勇 谢晓峰 张文俊 杨之廉 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084 |
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| 摘 要： | 利用器件与工艺综合的思想,开发出自顶向下的新的器件和工艺设计方法,实现了该设计方法的MOSPAD软件,并利用MOSPAD系统做出了一定的综合结果. 做出了关于器件与工艺综合的两个实例,即对FIB器件的器件综合和对阱形成工艺模块进行的工艺综合,并证明了自顶向下的器件与工艺综合思想的可行性.
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| 关 键 词： | 综合 器件综合 工艺综合 MOSPAD FIB |
| 文章编号： | 0253-4177(2002)07-0772-05 |
| 修稿时间： | 2001年7月4日 |
Device and Process Synthesis of Semiconductor |
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| Lu Yong,Xie Xiaofeng,Zhang Wenjun and Yang Zhilian.Device and Process Synthesis of Semiconductor[J].Chinese Journal of Semiconductors,2002,23(7):772-776. |
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| Authors: | Lu Yong Xie Xiaofeng Zhang Wenjun and Yang Zhilian |
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| Abstract: | With the methodology of process synthesis,a practical top down design method process and device are presented.And process synthesis software,MOSPAD,which implemented this idea,is also provided.The idea and method in device synthesis and process synthesis are introduced.Design of FIB MOSFET is acted as an example of device synthesis.And process module of well formation is acted as an example of process synthesis.It is proved this technology can be used in research of device and process. |
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| Keywords: | synthesis device synthesis process synthesis MOSPAD FIB |
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