大直径硅晶片化学机械抛光及其终点检测技术的研究与应用

化学机械抛光是硅片全局平坦化的核心技术,然而在实用阶段上,这项技术还受限于一些制造系统整合上的问题,其中有效的终点检测系统是影响抛光成效的重要关键.若未能有效地监测抛光运作,便无法避免硅片产生抛光过度或不足的缺陷.本文在介绍CMP机制与应用的基础上,系统分析了CMP终点检测技术的研究现状及存在的问题.

Application and research of endpoint-detection technology for chemical mechanical polishing of large size wafer

Up to now, only chemical mechanical polishing is the new technical solution toachieve global surface planarization in wafer production. However, this latest technology is stilllimited to the integration problem in production system. The most obviously of all, it needs oneefficient endpoint detection system to monitor CMP operation to avoid polishing over or not polish-ing completely. The purpose of this paper is to introduce the principle and application of the newwafer planarization technology. In addition, we try to analyze the necessity and characteristic ofthose endpoint-detection metrologies.