| Progress in 4H-SiC homoepitaxial growth by hot-wall LPCVD |
| |
| 作者姓名： | 孙国胜 高欣 王雷 赵万顺 曾一平 李晋闽 |
| |
| 作者单位： | SUN Guo-sheng(孙国胜)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
GAO Xin(高欣)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
WANG Lei(王雷)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
ZHAO Wan-shun(赵万顺)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
ZENG Yi-ping(曾一平)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
LI Jin-min(李晋闽)（Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China） |
| |
| 摘 要： | Recent progress in 4H-SiC homoepitaxial growth by using hot-wall low-pressure chemical vapor deposition (HW-LPCVD) at the authors' group was reviewed. Horizontal air-cooled low-pressure hot-wall CVD (LPHWCVD) system was developed and employed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4HSiC on off-oriented Si-face (0001) substrates was performed at a typical temperature of 1 500 ℃ by using the stepcontrolled epitaxy. The typical growth rate was controlled to be about 1.0 μm/h. The background doping was reduced to 2 × 1015- 5 × 1015 cm-3. The FWHM of the rocking curve was 0 308 nm in 2 μm× 2 μm scale. Intentional N-doped and B-doped 4H-SiC epilayers were obtained by in-situ doping of NH3 and B2 H6, respectively. Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O2 and H2 atmosphere at 1 150 ℃ and 4H-SiC MOS structures was obtained. Schottky barrier diodes with reverse blocking voltage of over 1000 V were achieved preliminarily.
|
| 文章编号： | 1004-0609(2004)S3-0263-05 |
Progress in 4H-SiC homoepitaxial growth by hot-wall LPCVD |
| |
| Abstract: | Recent progress in 4H-SiC homoepitaxial growth by using hot-wall low-pressure chemical vapor deposition (HW-LPCVD) at the authors' group was reviewed. Horizontal air-cooled low-pressure hot-wall CVD (LPHWCVD) system was developed and employed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4HSiC on off-oriented Si-face (0001) substrates was performed at a typical temperature of 1 500 ℃ by using the stepcontrolled epitaxy. The typical growth rate was controlled to be about 1.0 μm/h. The background doping was reduced to 2 × 1015- 5 × 1015 cm-3. The FWHM of the rocking curve was 0 308 nm in 2 μm× 2 μm scale. Intentional N-doped and B-doped 4H-SiC epilayers were obtained by in-situ doping of NH3 and B2 H6, respectively. Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O2 and H2 atmosphere at 1 150 ℃ and 4H-SiC MOS structures was obtained. Schottky barrier diodes with reverse blocking voltage of over 1000 V were achieved preliminarily. |
| |
| Keywords: | 4H-SiC homoepitaxial growth hot-wall LPCVD off-oriented substrate |
| 本文献已被 万方数据 等数据库收录！ |
|
