Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons |
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Authors: | Hisayoshi Itoh Masahito Yoshikawa Isamu Nashiyama Shunji Misawa Hajime Okumura Sadafumi Yoshida |
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Affiliation: | (1) Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12 Gunma, Japan;(2) Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305 Ibaraki, Japan |
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Abstract: | Electron spin resonance (ESR) was used to study defects induced by 2MeV-proton irradiation in cubic silicon carbide (3C-SiC)
epitaxially grown on Si substrates by chemical vapor deposition. A new ESR signal labeled T5 was observed at temperatures
lower than ≈100 K in Al doped, p-type 3C-SiC epilayers irradiated. The T5 signal has anisotropic g-values of g1 = 2.0020 ± 0.0001, g2 = 2.0007 ± 0.0001,and g3 = 1.9951 ± 0.0001. The principal axes of the g-tensor were found to be along the 〈100〉 directions, indicating that the T5
center has D2 symmetry. Isochronal annealing of the irradiated epilayers showed that the T5 center was annealed at temperatures around
150° C. A tentative model is discussed for the T5 center. |
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Keywords: | Electron spin resonance silicon carbide proton irradiation defect annealing |
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