| AlGaN紫外探测器及其焦平面阵列技术研究进展 |
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| 引用本文： | 王颖,王振.AlGaN紫外探测器及其焦平面阵列技术研究进展[J].半导体光电,2022,43(3):430-437. |
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| 作者姓名： | 王颖 王振 |
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| 作者单位： | 中电科技集团重庆声光电有限公司, 重庆 400060 |
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| 摘 要： | AlGaN紫外探测器及其焦平面阵列具有本征可见光盲特性，并可实现无需滤光片的日盲探测，且为全固态器件，是紫外探测技术的一个重要发展方向。文章介绍了AlGaN紫外探测器与焦平面阵列的研究现状及其存在的问题。在此基础上，分析了AlGaN雪崩光电二极管(APD)发展的基本条件，并介绍了AlGaN APD的发展现状及趋势。
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| 关 键 词： | AlGaN 日盲紫外 焦平面阵列 外延生长 p型掺杂 |
| 收稿时间： | 2022/5/17 0:00:00 |
Progress of AlGaN Photodetectors and Focal Plane Array Technologies |
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| WANG Ying,WANG Zhen.Progress of AlGaN Photodetectors and Focal Plane Array Technologies[J].Semiconductor Optoelectronics,2022,43(3):430-437. |
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| Authors: | WANG Ying WANG Zhen |
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| Affiliation: | Chongqing Acoustics-Optics-Electonics Co., Ltd. of China Electronics Technology Group Corp., Chongqing 400060, CHN |
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| Abstract: | AlGaN UV photodetectors and focal plane arrays, as all-solid-state devices, have intrinsic visible blind characteristics and can achieve solar-blind detection without filters, thus they have become an important development trend for UV detection technology. In this paper, the developments and existing problems of AlGaN UV photodetectors and focal plane arrays are introduced. The development status and trends of AlGaN APD are also discussed. |
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| Keywords: | AlGaN solar blind FPA epitaxy growth p-doping |
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