纳米抛光碳化硅压力对相变影响的分子动力学模拟

为了研究纳米抛光碳化硅时压力变化对表面的影响规律,建立了金刚石磨粒纳米抛光碳化硅的分子动力学模型,数值模拟了纳米尺度下的碳化硅抛光过程,具体分析了抛光压力线性增大过程中的配位数为1至6的原子数量的变化规律,揭示了线性改变抛光压力对被加工表面相变的影响规律,仿真结果表明:压力是诱导碳化硅相变的主要因素,当抛光压力增大时,...

Effect of Pressure Changes on the Nano-Polishing Process of Silicon Carbide Based on Molecular Dynamics

In order to study the effect of pressure changes on the nano-polishing process of silicon carbide,a molecular dynamics model of nano-polishing silicon carbide with the diamond abrasive is established.By using this model,polishing process at the nanoscale is numerically simulated under the different polishing pressures.With linear increase of polishing pressure,the variation of the number of atoms with coordination numbers from 1 to 6 is investigated in detail,which can help to reveal the influence of polishing pressure on the phase transition generatedon the workpiece surface.The simulation results show that pressure is an important factor to induce the phase transition during nano-polishing silicon carbide.When the polishing pressure increases,the number of atoms undergoing phase transition,the phase transition depth and the number of atoms with coordination numbers of 3,5,and 6 will increase,but the number of atoms with coordination numbers of 1,2,and 4 will decrease.