Induced slim ferroelectric hysteresis loops and enhanced energy-storage properties of Mn-doped (Pb0·93La0.07)(Zr0·82Ti0.18)O3 anti-ferroelectric thick films by aerosol deposition

In this study, the high ferroelectric hysteresis loss of (Pb_0·93La_0.07)(Zr_0·82Ti_0.18)O₃ (PLZT 7/82/18) antiferroelectric (AFE) ceramics was reduced by employing a combinatorial approach of Mn acceptor doping followed by thick film fabrication via an aerosol deposition (AD) process. The grains of the as-deposited PLZT 7/82/18 AFE AD thick films were grown by thermal annealing at 550 °C to enhance their electrical properties. Investigation of the electrical properties revealed that Mn-doping results in improved dielectric and ferroelectric properties, increased dielectric breakdown strength (DBS), and energy-storage properties. The Mn-doped PLZT AFE AD films possess a frequency-independent high dielectric constant (ε_r ≈ 660) with low dielectric loss (tan δ ≈ 0.0146), making them suitable candidates for storage capacitor applications. The bipolar and unipolar polarization vs. electric field (P-E) hysteresis loops of PLZT 7/82/18 AFE AD thick films were found to be slimmer than those of their bulk form (double hysteresis) with significantly reduced ferroelectric hysteresis loss, which is attributed to the AD-induced mixed grain structure. The Mn-doped PLZT 7/82/18 AFE AD thick films exhibited a low remnant polarization (P_r ≈ 9.22 μC/cm²) at a high applied electric field (~2750 kV/cm). The energy-storage density and energy efficiency of the Mn-doped PLZT AFE AD thick films were calculated from unipolar P-E hysteresis loops and found to be ~38.33 J/cm³ and ~74%, respectively.