Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements |
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Authors: | J S Kim D G Seiler R A Lancaster M B Reine |
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Affiliation: | (1) Semiconductor Electronics Division, National Institute of Standards and Technology, 20899 Gaithersburg, MD;(2) Loral Infrared & Imaging Systems, 02173 Lexington, MA |
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Abstract: | Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg1−xCdxTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained
within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with
the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the
alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (Eg ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 102 m2Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering.
A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed
electron mobility and is found to be of the order of 10−4 of the mass of a free electron. |
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Keywords: | Bandgap-crossing electron transport Hall measurements HgCdTe high electron mobility very-narrow-gap semiconductors |
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