| 原位钝化和催化剂钝化沟道阱能带计算 |
| |
| 引用本文： | 薛舫时.原位钝化和催化剂钝化沟道阱能带计算[J].固体电子学研究与进展,2011,31(4):319-327. |
| |
| 作者姓名： | 薛舫时 |
| |
| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
| |
| 基金项目： | 创新基金资助项目(JJ0901) |
| |
| 摘 要： | 把Si3N4/AlGaN界面看成新的异质结,自洽求解薛定谔方程和泊松方程,建立起原位钝化和CATCVD钝化异质结构的新能带模型.运用这一模型,研究了原位钝化和CATCVD钝化异质结沟道阱的电子气密度、能带结构和输运性能,解释了相应的实验结果.在此基础上研究了这些新钝化异质结沟道阱能带的优化设计.优化设计的钝化复合势垒沟...
|
| 关 键 词： | 原位钝化氮化硅 催化剂化学气相淀积氮化硅 氮化硅/半导体异质结 铝镓氮/铝铟氮复合势垒 能带剪裁 动态电流崩塌模型 二维异质结构 |
Band Calculation for Heterostructures Passivated by In-situ Grown Si_3N_4 and CATCVD Grown Si_3N_4 |
| |
| XUE Fangshi.Band Calculation for Heterostructures Passivated by In-situ Grown Si_3N_4 and CATCVD Grown Si_3N_4[J].Research & Progress of Solid State Electronics,2011,31(4):319-327. |
| |
| Authors: | XUE Fangshi |
| |
| Affiliation: | XUE Fangshi(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
| |
| Abstract: | A new band model for heterostructures passivated by in-situ grown Si3N4 and CATCVD grown Si3N4 is established through the self-consistent solution of Poisson equation and Schrdinger equation by regarding the interface of Si3N4/AlGaN as a new heterointerface.The electron densities in channel,band structures,and electron transport performance for the heterostructures passivated by in-situ grown Si3N4 and CATCVD grown Si3N4 are investigated using this new model,from which the published experimental results are... |
| |
| Keywords: | passivation with in-situ grown Si3N4 CATCVD grown Si3N4 Si3N4/semiconductor heterostructure AlGaN/AlInN compound barrier band tailoring dynamic current collapse model two dimensional heterostructure |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
