High resistivity measurement of SiC wafers using different techniques |
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Authors: | P G Muzykov Y I Khlebnikov S V Regula Y Gao T S Sudarshan |
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Affiliation: | (1) Bandgap Technologies, Inc., 29201 Columbia, SC;(2) Department of Electrical Engineering, University of South Carolina, 29208 Columbia, SC |
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Abstract: | To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. |
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Keywords: | Resistivity silicon carbide four-point probe method van der Pauw method contactless-resistivity measurement |
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