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垂直沉积法在GaAs衬底上制备有序SiO2胶体晶体
引用本文:谭春华,范广涵,陈胜利,周天明.垂直沉积法在GaAs衬底上制备有序SiO2胶体晶体[J].光电子.激光,2005,16(10):1223-1226.
作者姓名:谭春华  范广涵  陈胜利  周天明
作者单位:华南师范大学光电子材料与技术研究所,广东,广州,510631;石油大学重质油国家重点实验室,北京,102249
基金项目:基金项目:国家“973”预演资助项目(5130702)
摘    要:报道了一种利用直径为286nm的单分散SiO2胶体颗粒制备胶体晶体的方法。乙醇悬浮中的SiO2颗粒通过毛细作用力在垂直插入其中的GaAs衬底表面自组装成胶体晶体。扫描电子显微镜(SEM)和紫外-可见分光光度计对胶体晶体的形貌和光学特性进行了表征。结果显示,所得到的胶体晶体膜具有较好的三维有序结构。分析了退火对样品光子带隙的影响。

关 键 词:蛋白石  胶体晶体  光子带隙  垂直沉积法  GaAs
文章编号:1005-0086(2005)10-1223-04
收稿时间:2004-12-30
修稿时间:2004-12-302005-06-21

Ordered SiO2 Colloidal Crystals Grown on GaAs Substrates
TAN Chun-hu,FAN Guang-han,CHEN Sheng-li,ZHOU Tian-ming.Ordered SiO2 Colloidal Crystals Grown on GaAs Substrates[J].Journal of Optoelectronics·laser,2005,16(10):1223-1226.
Authors:TAN Chun-hu  FAN Guang-han  CHEN Sheng-li  ZHOU Tian-ming
Affiliation:1. Institute of Opto electronic Materials and Technology, South China Normal University, Guangzhou 510631 ,China ; 2.State Key Laboratory of Heavy Oil Processing, University of Petroleum, Beijing 102249, China
Abstract:A method for preparation of particle crystal films constructed from monodisperse SiO_2 colloidal particles in diameter of 286 nm is reported.The films were prepared from an ethanol suspension by vertical deposition that relies on caplillary forces to assemble colloidal crystal particles on a vertical GaAs substrate.The 3-D ordered films were characterized by reflection spectra and scanning electric microscope(SEM).The effect of sintering on the photonic band gap of colloidal particle crystals was investigated.
Keywords:opal  colloidal crystal  photonic bandgap  vertical deposition method  GaAs
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