| Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate |
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| 作者姓名： | Zhong Xinghu Wu Junfeng Yang Jianjun and Xu Qiuxia |
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| 作者单位： | 中国科学院微电子研究所 北京100029
(钟兴华，吴峻峰，杨建军)，中国科学院微电子研究所 北京100029(徐秋霞) |
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| 摘 要： | Electrical properties of high quality ultra thin nitride/oxynitride（N/O）stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated，and ultra thin (＜2 nm＝ N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.
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| 关 键 词： | equivalent oxide thickness nitride/oxynitride gate dielectric stack high k boron penetration metal gate |
Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate |
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| Zhong Xinghu,Wu Junfeng,Yang Jianjun,and Xu Qiuxia.Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate[J].Chinese Journal of Semiconductors,2005,26(4):651-655. |
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| Authors: | Zhong Xinghua Wu Junfeng YANG Jianjun Xu Qiuxia |
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| Abstract: | Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices. |
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| Keywords: | equivalent oxide thickness nitride/oxynitride gate dielectric stack high k boron-penetration metal gate |
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