A new CVD reactor for semiconductor film deposition |
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Authors: | Su-Ku Kim Elias C Stassinos Hong Hie Lee |
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Affiliation: | (1) Department of Chemical Engineering, Seoul National University, Seoul, Korea;(2) University of Florida, Gainesvi |
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Abstract: | The concept and design of a new chemical vapor deposition (CVD) reactor is presented for both epitaxial and nonepitaxial film
deposition in semiconductor processing. The reactor is designed in such a way that a stagnant semiconductor source fluid of
uniform concentration is provided for the film deposition without causing free or forced convection. The supply of the source
gas for the deposition is by diffusion through a porous material such as quartz or graphite. Compared to the low pressure
CVD (LPCVD) reactor with mounted wafer configuration, the new reactor should give a better film thickness uniformity and about
an order of magnitude reduction in the amount of the source gas required. Further, at least for polycrystalline silicon deposition,
the deposition rate can be much higher than is currently practiced with the LPCVD reactor. Design equations for the reactor
are given. Details on the design for the polycrystalline silicon deposition are also given. |
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