| 120nm栅长In0.7Ga0.3As/In0.52Al0.48As HEMTs 器件 |
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| 引用本文： | 黄杰,郭天义,张海英,徐静波,付晓君,杨浩,牛洁斌.120nm栅长In0.7Ga0.3As/In0.52Al0.48As HEMTs 器件[J].半导体学报,2010,31(7):074008-3. |
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| 作者姓名： | 黄杰 郭天义 张海英 徐静波 付晓君 杨浩 牛洁斌 |
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| 作者单位： | [1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]School of Physical Science and Technology,Southwest University,Chongqing 400715,China |
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| 摘 要： | 利用新型的PMMA/PMGI/ZEP520/PMGI四层胶T形栅电子束光刻技术制备出120nm栅长InP基雁配In0.7Ga0.3As/In0.52Al0.48As 高电子迁移率晶体管。制作出的InP基HEMT器件获得了良好的直流和高频性能，跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大单向功率增益频率分别达到520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz 及 120 GHz。文中的材料结构和所有器件制备均为本研究小组自主研究开发。
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| 关 键 词： | HEMT器件 InP基 纳米 设备制造技术 高电子迁移率 InGaAs InAlAs 阈值电压 |
| 修稿时间： | 3/2/2010 12:00:00 AM |
120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT |
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| Huang Jie,Guo Tianyi,Zhang Haiying,Xu Jingbo,Fu Xiaojun,Yang Hao and Niu Jiebin.120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT[J].Chinese Journal of Semiconductors,2010,31(7):074008-3. |
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| Authors: | Huang Jie Guo Tianyi Zhang Haiying Xu Jingbo Fu Xiaojun Yang Hao and Niu Jiebin |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Physical Science and Technology, Southwest University, Chongqing 400715, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | 120 nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology, which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack. These devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to-source current, threshold voltage, maximum current gain frequency, and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz and 120 GHz, respectively. The material structure and all the device fabrication technology in this work were developed by our group. |
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| Keywords: | HEMT InP InGaAs/InAlAs cutoff frequency T-shaped gate |
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