| 硅片和硅器件工艺中的背面损伤吸除技术 |
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| 引用本文： | 胡才雄.硅片和硅器件工艺中的背面损伤吸除技术[J].上海有色金属,1994,15(1):31-36. |
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| 作者姓名： | 胡才雄 |
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| 作者单位： | 上海有色金属研究所 |
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| 摘 要： | 本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。
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| 关 键 词： | 硅片 机械损伤 激光辐射 离子注入 |
Backside Damage Gettering Technique in Silicon Wafers and Silicon Devices Technology |
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| Hu Caixiong.Backside Damage Gettering Technique in Silicon Wafers and Silicon Devices Technology[J].Shanghai Nonferrous Metals,1994,15(1):31-36. |
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| Authors: | Hu Caixiong |
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| Abstract: | Three main backside gettering techniques for silicon wafers: mechanical damage technique, laser radiation technique and ion implantation technique, are introduced iii this paper. The mechanism,technological conditions, situation of application and deyelopmcnt of these techniques are reviewed in detail. |
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| Keywords: | Silicon wafer Gettering Mechanical damage Laser radiation Ion implantation |
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