p型氮化镓退火及发光二极管研究

对金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长的p型氮化镓(p-GaN)在氮气气氛下的热退火进行研究。用Hall测试系统测量不同温度、不同时间退火后样品的电学性能;对一组蓝光LEDs分别进行不同退火温度、退火时间实验,对退火前后量子阱峰值强度半高宽和积分面积变化进行了比较研究。实验表明p-GaN在825°C、8min条件下退火可以取得较高的空穴浓度,而LED在750°C、30min退火可以使量子阱的半高宽展宽较小,积分强度降低百分比小,而且LED芯片正向电压也较小。

Investigation of p-GaN Thermal Annealing and Light Emitting Diode

The p-GaN investigated was grown on sapphire substrates by metal-organic chemical vapor deposition,and thermal annealing under N2ambient.On the different thermal temperature and time conditions,its electrical properties were demonstrated by Hall measure system,and a series of blue LEDs were studied by PL also,then,their full width at half maximum(FWHM) broaden and integral area reduction percentage of LEDs quantum well were compared.It was demonstrated the p-GaN has higher hole carrier concentration under the 825°C/8 minutes condition,and LEDs FWHM broaden and integral area reduction percentage were less under the 750°C/30 minutes condition,and LEDs positive voltage were lower.