（英）离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性

采用离子束溅射法通过在CH4和Ar 的混合气体中溅射Ge靶材制备碳化锗(Ge1-xCx)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8 GPa.由于薄膜中的Ge-C键代替了C-C 键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.

The infrared optical and mechanical properties of germanium carbide films prepared by ion beam sputtering

Germanium carbon (Ge1-xCx) thin films were deposited by ion beam sputtering deposition of Ge target in a CH4/Ar discharge. The surface morphology, chemical structure, infrared optical and mechanical properties of the Ge1-xCx films were investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopy(XPS), Fourier transform infrared (FTIR) spectroscopy and nano-indentation, respectively. The relationship between ion beam voltage and film properties was discussed. The results show that the surface roughness decreases with increasing of the ion beam voltage. The film deposited at a higher voltage has lower carbon content and higher fraction of Ge-C bonds. The film has excellent infrared optical and mechanical properties. The films show good transparent over a wide range. Due to the content of the carbon decreasing with increasing of voltage, the refractive index increases obviously as the ion beam voltage increases from 300 V to 800 V. The hardness of the film is above 8 GPa. With the Ge-C bonds instead of the C-C bonds and C-Hn bonds, the hardness of the film increases with increasing ion beam voltage