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Integration of SiC-1D nanostructures into nano-field effect transistors
Affiliation:1. Laboratoire des Technologies de la Microélectronique, CNRS/UJF-Grenoble1/CEA LTM, 17, rue des martyrs, 38054 Grenoble cedex 9, France;2. IMEP-LAHC Grenoble INP, CNRS – Minatec 3, Parvis Louis Néel-BP 257, 38016 Grenoble, France;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea;2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, South Korea;3. Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea;1. School of Science, Jiangnan University, Wuxi 214122, China;2. China Electronics Technology Group Corporation No. 38 Research Institute, Hefei 230088, China;3. Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey
Abstract:We report on the integration and the electrical transport properties of silicon carbide-based one-dimensional nanostructures into field effect transistors. Different kinds of SiC-based 1D nanostructures have been used: 3C– and 4H–SiC nanowires obtained by a plasma etching process, Si–SiC core–shell nanowires and SiC nanotubes both obtained by a carburization route of silicon nanowires.
Keywords:Silicon carbide  Nanowire  Nanotube  Field-effect transistor
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