Effects of bonding frequency on Au wedge wire bondability |
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Authors: | Yu Hin Chan Jang-Kyo Kim Deming Liu Peter C K Liu Yiu Ming Cheung Ming Wai Ng |
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Affiliation: | (1) Department of Mechanical Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong;(2) ASM Assembly Automation, Ltd. 4/F, Watson Centre, 16 Kung Yip Street, Kwai Chung, Hong Kong |
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Abstract: | This paper studies the effect of bonding frequency on bondability of Au wire on a PCB bond pad. The wire bonding was performed
at two different frequencies, 62 kHz and 138 kHz, and at varying bond pad temperatures between 60 and 110 °C. It is shown
that the bond strengths of the wires bonded at a high frequency were generally higher than those bonded at a low frequency
for all temperatures studied. Two distinct wire failure modes were observed for the wires bonded at the high frequency: the
wires with high pull strengths failed at the bond neck, while those with low pull strengths failed mainly within the bonded
wire body. This resulted in a large pull strength data scatter, which was explained by the high Q factor of the high frequency
transducer. The bondability obtained for the high bond power end was much higher for the high frequency, giving rise to a
wider process window in terms of bond power for the high frequency bonding. The wire bonding performance was compared between
the “open” and “closed” loop bonding systems. The minimum bond powers required for successful bonds in the closed loop system
were significantly lower than those required in the open loop system (e.g. 20–40 mW vs. 110–135 mW at 90 °C). The closed loop
system was able to correct the resonance frequency shift, thus maintaining an almost constant bond power during bonding. In
the open loop system, in contrast, a high bond power needs to be continuously supplied because of the power drop. This causes
an excessive energy to be transmitted to the bonded wire, resulting in weakened wire due to excessive deformation. |
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