Effect of silica doping on the densification and grain growth in zinc oxide

The ability of silica (SiO₂) in controlling the densification and grain growth behavior of nano crystalline zinc oxide (ZnO) has been systematically studied. It has been observed that SiO₂ acts as a sintering inhibitor in the ZnO–SiO₂ system up to 4 wt.% limiting value beyond which densification behavior of the system remains almost unchanged, especially above 1100 °C. The addition of SiO₂ to ZnO retards grain growth which in turn results a finer ultimate grain size as compared to the undoped ZnO. However, stabilization in grain size occurs at ≥4 wt.% SiO₂ addition. It has been observed that SiO₂ incorporation changes the grain growth mechanism up to 4 wt.% addition, beyond which no remarkable changes was noticed. The grain growth (n) shows distinctly different slopes as a function of sintering time for the SiO₂ doped ZnO systems than undoped ZnO. The different slopes tend to indicate that different diffusion mechanisms and probably the formation of a secondary phase (Zn–Si–O) at the grain boundary control the densification and grain growth. The thermal expansion coefficient of the system has been found to decrease substantially beyond 4 wt.% SiO₂ addition to ZnO.