Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing

Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of ²⁸Si electrical activation and ²⁸Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3×10^?2 s and duty factor of 100).