单片集成谐振式升压转换器设计

为了解决高频谐振功率转换器功率密度较低的问题，提出基于绝缘体上硅（SOI）工艺平台和氮化镓（GaN）功率晶体管的三维集成的单开关全谐振升压转换器，开关频率为500 MHz. 转换器主体采用传统Class-E放大器的衍生电路结构?并联式Class-E拓扑，栅极驱动器采用单管谐振式驱动拓扑. 转换器中的谐振电感元件采用SOI工艺中提供的平面螺旋电感实现，谐振电容元件采用GaN功率晶体管的米勒寄生电容实现，硅基芯片与GaN芯片通过三维倒装技术连接. 围绕电路参数设计、谐振元件的实现和版图结构设计进行详细分析. 实验结果显示，当输入电压为12 V时，片上转换器的最高功率密度为1.481 W/mm²，满载效率为60%，最高效率为89%. 本设计为实现高功率密度、高集成度的功率转换器提供了新思路.

Monolithic integrated resonant boost converter design

A three-dimensional integrated single-switch full-resonant boost converter was proposed based on silicon on insulator (SOI) process platform and gallium nitride (GaN) power transistors, in order to solve the problem of low power density of resonant power converters operating at high frequency. The switching frequency was 500 MHz. The main body of the converter adopted the derivative circuit structure of the traditional Class-E amplifier, i. e. parallel Class-E topology, and the gate driver adopted the single-switch resonant driving topology. The resonant inductance components in the converter were realized by the planar spiral inductor provided in the SOI process, the resonant capacitance components were realized by the Miller parasitic capacitance of the GaN power transistor, and the silicon-based chip and the GaN chip were connected by three-dimensional flip-chip technology. A detailed analysis was carried out around the design of circuit parameters, the realization of resonant components and the design of layout structure. Experimental results showed that when the input voltage was 12 V, the highest power density of the on-chip converter was 1.481W/mm², the full-load efficiency was 60%, and the highest efficiency was 89%. This design provides a new idea for realizing power converter with high power density and high integration.