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基于半导体光放大器的非相干光源抗反膜的优化设计
引用本文:黄黎蓉,黄德修,张新亮.基于半导体光放大器的非相干光源抗反膜的优化设计[J].半导体学报,2006,27(8):1471-1475.
作者姓名:黄黎蓉  黄德修  张新亮
作者单位:华中科技大学武汉光电国家实验室,武汉 430074;华中科技大学武汉光电国家实验室,武汉 430075;华中科技大学武汉光电国家实验室,武汉 430076
摘    要:对半导体光放大器(SOA)放大的自发发射(ASE)谱进行了实验和理论研究,并且分析了SOA端面反射率对ASE谱的谱宽以及平坦度的影响.结果表明,不恰当的抗反膜会严重减小输出光谱的带宽;而在采用具有宽带材料增益谱的有源区基础上,结合抗反膜的优化设计,则可以获得既宽又平坦的非相干光源.

关 键 词:半导体光放大器  非相干光源  带宽  平坦度  抗反膜  半导体  光放大器  相干光源  抗反膜  优化设计  Optical  Amplifier  Semiconductor  Based  Sources  Incoherent  Wideband  Flat  Antireflection  Coating  Design  结合  有源区  增益谱  材料  宽带  带宽
文章编号:0253-4177(2006)08-1471-05
收稿时间:1/4/2006 3:41:25 PM
修稿时间:2/22/2006 9:21:11 PM

Optimal Design of Antireflection Coating for Flat and Wideband Incoherent Optical Sources Based on a Semiconductor Optical
Huang Lirong,Huang Dexiu and Zhang Xinliang.Optimal Design of Antireflection Coating for Flat and Wideband Incoherent Optical Sources Based on a Semiconductor Optical[J].Chinese Journal of Semiconductors,2006,27(8):1471-1475.
Authors:Huang Lirong  Huang Dexiu and Zhang Xinliang
Affiliation:Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430075,China;Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430076,China
Abstract:The output amplified spontaneous emission (ASE) spectrum from a semiconductor optical amplifier (SOA) is studied theoretically and experimentally.The effect of facet reflectivity on the bandwidth and flatness of the ASE spectrum is investigated,and it is found that an improper antireflection coating narrows the bandwidth of the ASE spectrum.For an SOA with an active region with a wide material gain spectrum,an optimal antireflection coating helps to realize an SOA-based incoherent optical source with a high bandwidth and good flatness.
Keywords:semiconductor optical amplifier  incoherent optical source  bandwidth  flatness  antireflection coating
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