喷雾热解法生长N掺杂ZnO薄膜机理分析

通过超声喷雾热解工艺,以醋酸锌和醋酸铵的混合水溶液为前驱溶液,在单晶Si(100) 衬底上制备了N掺杂ZnO薄膜,采用热质联用分析(TG—DSC—MS)、X射线衍射(XRD)、场发射扫描电镜(FESEM)和霍耳效应(Hall-effect)测试等手段研究了喷雾热解工艺下N掺杂ZnO薄膜的生长机理、晶体结构和电学性能.结果表明,随衬底温度的不同,薄膜呈现出不同的生长机理,从而影响薄膜的晶体结构和电学性能.在优化的衬底温度下,实现了ZnO薄膜的p型掺杂,得到的p型ZnO薄膜具有优异的电学性能,载流子浓度为3.21×10¹⁸cm^-3,霍耳迁移率为110cm²·V^-1s^-1,电阻率为1.76×10^-2Ω·cm.

Growth Mechanism for N-doped ZnO Films Grown by Spray Pyrolysis Method

N-doped ZnO films were grown at Si(100) substrates by ultrasonic spray pyrolysis with the precursor of zinc acetate and ammonium acetate. Thermal-mass spectrometric analysis (TG-DSC-MS), X-ray diffraction (XRD), and field emission scanning electron microscope (FESEM) were employed to analyze the growth mechanism, crystal structure and electrical properties of films. Results show that the films grown at different substrate temperatures show different growth mechanisms, which could influence crystal structure and electrical properties of films. The successful p-type doping can be realized at an optimized substrate temperature. The p-type ZnO film shows excellent electrical properties such as a hole concentration of 3.70×10¹⁸cm^-3, hole mobility of 110cm²·^-1s^-1 and resistivity of 1.4×10^-2Ω·cm.