首页 | 官方网站   微博 | 高级检索  
     

金刚石厚膜与硬质合金的连接
引用本文:孙凤莲,陈捷,张杰,冯吉才,吴培莲.金刚石厚膜与硬质合金的连接[J].焊接学报,1999,20(1):45-49.
作者姓名:孙凤莲  陈捷  张杰  冯吉才  吴培莲
作者单位:1. 哈尔滨理工大学
2. 哈尔滨工业大学
摘    要:采用扩散焊与钎焊相结合的方法,用Ti箔和Ag-Cu箔共同做中间层材料,在一定的温度、压力和保温时间下,实现了气相沉积金刚石厚膜与硬质合金间的牢固连接。经扫描电镜和电子探针分析发现,在金刚石与中间层界面近区有C、T元素的相互扩散,并且观察断口发现:断裂大部分发生在中间层上,只有局部区域金刚石的表面暴露出来。这可以说明金刚石与钎料之间已形成了牢固的冶金连接。

关 键 词:金刚石厚膜  硬质合金  连接
收稿时间:1998/4/15 0:00:00
修稿时间:1998/11/11 0:00:00

Bonding of Diamond Thick Films/Cemented Carbide
Sun Fenglian,Chen Jie,Zhang Jie,Feng Jicai and Wu Peilian.Bonding of Diamond Thick Films/Cemented Carbide[J].Transactions of The China Welding Institution,1999,20(1):45-49.
Authors:Sun Fenglian  Chen Jie  Zhang Jie  Feng Jicai and Wu Peilian
Affiliation:Harbin University of Science and Technology,Harbin University of Science and Technology,Harbin Institute of Technology,Harbin Institute of Technology and Harbin Institute of Technology
Abstract:The bonding between chemical vapor deposition (CVD) thick films diamond and cemented carbide was performed by diffusion brazing under controlled temperature, pressure and time. The filled intermediate layer materials are reactive metal Ti foil and Ag-Cu alloy foil.The results show that the diffusion of C and Ti elements occurred on the interface between the diamond and the filled intermediate layer.The rupture occur in the filled material.It can be considered that metallurgical bonding has formed in the interface between diamond-intermediate.
Keywords:diamond thick films  bonding  cemented carbide
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《焊接学报》浏览原始摘要信息
点击此处可从《焊接学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号