| 基于小信号S参数的MOSFET射频功率放大器设计 |
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| 引用本文： | 宁志强,刘太君,叶焱,许高明,陆云龙.基于小信号S参数的MOSFET射频功率放大器设计[J].传感器与微系统,2017,36(11). |
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| 作者姓名： | 宁志强 刘太君 叶焱 许高明 陆云龙 |
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| 作者单位： | 宁波大学信息科学与工程学院,浙江宁波,315211 |
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| 基金项目： | 国家自然科学基金资助项目，浙江省公益技术应用研究项目 |
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| 摘 要： | 介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器.在工作频段内,功率放大器增益大于23 dB,输入端口的匹配网络的回波损耗S11优于-19 dB.实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值.
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| 关 键 词： | 小信号 S参数 射频功率放大器 MOSFET |
Design of MOSFET RF power amplifier based on small signal S-parameters |
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| NING Zhi-qiang,LIU Tai-jun,YE Yan,XU Gao-ming,LU Yun-long.Design of MOSFET RF power amplifier based on small signal S-parameters[J].Transducer and Microsystem Technology,2017,36(11). |
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| Authors: | NING Zhi-qiang LIU Tai-jun YE Yan XU Gao-ming LU Yun-long |
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| Abstract: | In the actual design of radio frequency(RF)power amplifier,the device manufacturers often provide only small-signal scattering (S )-parameters and static I-V curve of a metal oxide semiconductor field effect transistor(MOSFET)transistor. Introduce how to design an RF power amplifier with small signal S-parameters. A MOSFET power amplifier operated at 160 MHz is designed with this design method,where a FET transistor from Mitsubishi is selected. The gain of the power amplifier in the working frequency band is larger than 23 dB,and S11 of the input port is prior to -19 dB. The example illustrates that this design method is simple to simulation and easy to implement,which has great value in engineering application. |
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| Keywords: | small signal scattering (S )-parameters radio frequency (RF )power amplifer metal oxide semiconductor field effect transistor(MOSFET) |
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