5~6GHz自适应线性化偏置的InGaP/GaAs HBT功率放大器

针对高质量无线局域网的传输需求,设计了一款工作在5~6 GHz的宽带磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器芯片。针对HBT晶体管自热效应产生的非线性和电流不稳定现象,采用自适应线性化偏置技术,有效地解决了上述问题。针对射频系统的功耗问题,设计了改进的射频功率检测电路,以实现射频系统的自动增益控制,降低功耗。通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术实现该功率放大器芯片。仿真结果表明,功放芯片的小信号增益达到32 dB;1 dB压缩点功率为28.5 dBm@5.5 GHz,功率附加效率PAE超过32%@5.5 GHz;输出功率为20 dBm时,IMD3低于-32 dBc。

5-6GHz InGaP/GaAs HBT power amplifier with adaptive linearization bias circuit

A broadband InGaP/GaAs HBT power amplifier chip operating at 5-6 GHz was designed in order to meet the transmission requirements of high-quality wireless local area networks.Aiming at the nonlinearity and current instability caused by the self-heating effect of HBT transistors,the adaptive linearization bias technology was adopted.An improved RF power detection circuit was designed to realize automatic gain control of the RF system in order to reduce the power consumption of RF system.This power amplifier chip was realized by InGaP/GaAs HBT monolithic microwave integrated circuit(MMIC)technology.The simulation results show that the small-signal gain of the power amplifier chip reaches 32 dB;the power of the 1 dB compression point is 28.5 dBm@5.5 GHz,and the PAE exceeds 32%@5.5 GHz;when the output power is 20 dBm,IMD3 is lower than-32 dBc.