| 具有纳米级结构出光面的AlGaInP基发光二极管 |
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| 引用本文： | 徐丽华,邹德恕,邢艳辉,宋欣原,徐晨,沈光地.具有纳米级结构出光面的AlGaInP基发光二极管[J].光电子．激光,2008,19(10). |
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| 作者姓名： | 徐丽华 邹德恕 邢艳辉 宋欣原 徐晨 沈光地 |
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| 作者单位： | 北京工业大学,北京市光电子技术实验室,北京,100022 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划)，北京市属市管高等学校人才强教计划 |
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| 摘 要： | 研究了一种利用金属自组装纳米掩膜和ICP刻蚀对AlGaInP基发光二极管(LED)表面进行粗化的技术,使光输出得到了提高.粗化了的AlGaInP基LED比常规的AlGaInP基LED,光强提高了27%,光功率提高了12.6%,实验结果具有可重复性.可以进一步优化Au颗粒的周期和分散程度,提高AlGaInP基LED的提取效率.
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| 关 键 词： | 表面粗化 金属纳米掩膜 干法刻蚀 |
Nano-structured surface fabrication for AlGalnP light emitting diodes |
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| XU Li-hu,ZOU De-shu,XING Yan-hui,SONG Xin-yuan,XU Chen,SHEN Guang-di.Nano-structured surface fabrication for AlGalnP light emitting diodes[J].Journal of Optoelectronics·laser,2008,19(10). |
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| Authors: | XU Li-hu ZOU De-shu XING Yan-hui SONG Xin-yuan XU Chen SHEN Guang-di |
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| Affiliation: | XU Li-hua,ZOU De-shu,XING Yan-hui,SONG Xin-yuan,XU Chen,SHEN Guangdi (Optoelectronic Technology Lab,Beijing University of Technology,Beijing 100022,China) |
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| Abstract: | The self-assembled nanostructure metal is proposed as the masks,then the surface of AlGaInP light emitting diodes(LED) is dry-etched to be roughened.The roughened surfaces increase the light-output.The light intensity and light power of roughened AlGaInP LEDs increase by 27% and 12.6% respectively compared with normal AlGaInP LEDs.By optimizing the period and separation of metal masks,the light-output will be further increased. |
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| Keywords: | surface roughing metal nanograde masks dry etching |
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