Microstructure of reactively sputtered oxide diffusion barriers |
| |
| Authors: | E Kolawa C W Nieh F C T So M -A Nicolet |
| |
| Affiliation: | (1) California Institute of Technology, 91125 Pasadena, CA;(2) Hewlett-Packard Co., 95131 San Jose, CA |
| |
| Abstract: | Molybdenum oxide (Mo1-x
O
x
) and ruthenium oxide (RuO2) films were prepared by rf reactive sputtering of Mo or Ru targets in an O2/Ar plasma. Both films exhibit metallic conductivities. The influence of the deposition parameters on the phase that forms
and on the microstructure of Mo1-x
O
x
and RuO2 films is reported. A phase transformation is observed in Mo1-x
O
x
films subjected to heat treatment. The diffusion barrier performance of Mo1-x
O
x
and RuO2 layers interposed between Al and Si is compared. |
| |
| Keywords: | Mo1-x O x RuO2 metallic films microstructure |
| 本文献已被 SpringerLink 等数据库收录！ |
