Effects of Ga concentration on structural and electrical properties of screen printed-CIGS absorber layers on polyethylene terephthalate |
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| Affiliation: | 1. Nano-Optoelectronics Research and Technology Laboratory (N.O.R), School of Physics, Universiti Sains Malaysia, Penang 11800, Malaysia;2. Department of Physics, School of Sciences, Faculty of Health and Sciences, University of Koya, Koya, Kurdistan Region, Iraq;3. School of Chemical Sciences, Universiti Sains Malaysia, Penang 11800, Malaysia |
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| Abstract: | Copper indium gallium diselenide (CIGS) films were deposited as an absorber layer on polyethylene terephthalate (PET) substrates by a screen printing technique using CIGS ink with a Ga content ranging from 0.3 to 0.6. The melting point of PET substrate is 254.9 °C; the average transmission in the visible (400 nm–800 nm) for PET substrates is greater than 85%. Effects of Ga content of the CIGS absorber layer on structural and electrical properties of the CIGS films were studied. The lattice parameters, a and c for all CIGS films were decreased with increasing Ga content. At room temperature, Hall mobility and charge-carrier concentration of the CIGS films varies from 97.2 to 2.69 cm2 V?1 s?1 and 9.98×1016 to 3.23×1018 cm?3, respectively. |
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