| 电路级栅氧短路故障的动态电流测试分析 |
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| 引用本文： | 姜书艳,罗毅,罗刚,谢永乐.电路级栅氧短路故障的动态电流测试分析[J].电子科技大学学报（自然科学版）,2010,39(1):61-64. |
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| 作者姓名： | 姜书艳 罗毅 罗刚 谢永乐 |
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| 作者单位： | 1.电子科技大学自动化工程学院 成都 610054; |
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| 基金项目： | 国家自然科学基金，国家863项目 |
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| 摘 要： | 栅氧短路故障对于集成电路的稳定性有着重要的影响,故障行为会在不产生逻辑错误的情况下导致参数失效。该文使用了一种电路级的故障模型模拟栅氧短路故障,研究了栅氧缺陷对与非门电路的影响,选取了适合于电流测试的测试矢量,对未发生逻辑错误的故障电路的动态电流进行分析。在实验中采用了TSMC 0.18μm CMOS工艺,仿真结果显示通过分析电源通路上的动态电流可以检测有潜隐性故障的器件。与电压测试方法相比,动态电流测试能更好地对栅氧短路缺陷进行诊断。
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| 关 键 词： | 故障模型 缺陷测试 动态电流测试 故障模拟 |
| 收稿时间： | 2008-07-08 |
Analysis of Dynamic Supply Current Testing for Gate Oxide Shorts Circuit Level |
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| Affiliation: | 1.School of Automation Engineering,University of Electronic Science and Technology of China Chengdu 610054;2.Department of Mechanical Engineering,Chengdu Electromechanical College Chengdu 610031 |
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| Abstract: | Gate oxide short is one of the key issue to the reliability of integrated circuit (IC),it can result in parametric failure without any logic error.In this paper,the behavior of a CMOS NAND gate with this gate oxide shorts is investigated base on dynamic supply current (IDDT) testing in circuit level.Some appropriate test patterns are selected to simulate and analyze the dynamic supply current of the gate oxide short circuit in TSMC 0.18 μm technology without any logic fault.The simulate results demonstrate that it is possible to detect the defective devices by analyzing the IDDT on the power supply path.Compared with the voltage test,IDDT testing can detect the gate oxide shorts more effectively. |
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| Keywords: | defect model fault detection IDDT testing defect simulation |
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