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Organic Field‐Effect Transistors: The Origin of Excellent Gate‐Bias Stress Stability in Organic Field‐Effect Transistors Employing Fluorinated‐Polymer Gate Dielectrics (Adv. Mater. 42/2014) |
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| Authors: | Jiye Kim Jaeyoung Jang Kyunghun Kim Haekyoung Kim Se Hyun Kim Chan Eon Park |
| Affiliation: | 1. POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Nam‐Gu, Pohang, Gyungbuk, Republic of Korea;2. School of Materials Science and Engineering, Yeungnam University, Gyungsan, Gyeongbuk, Republic of Korea;3. Department of Nano, Medical and Polymer Materials, Yeungnam University, Gyungsan, Gyeongbuk, Republic of Korea |
| Abstract: | |
| Keywords: | organic field‐effect transistors gate‐bias stabilities fluorinated polymers |
