| 500 V/11 A VDMOSFET 的研究 |
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| 引用本文： | 陈宁,朱长纯,吴一清,单建安.500 V/11 A VDMOSFET 的研究[J].西安交通大学学报,1998(5). |
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| 作者姓名： | 陈宁 朱长纯 吴一清 单建安 |
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| 作者单位： | 西安交通大学，国营卫光电工厂，香港科技大学 |
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| 摘 要： | 在理论分析的基础上，设计制作了５００Ｖ／１１ＡＶＤＭＯＳＦＥＴ芯片，并且进行了失效分析，从而进一步解决了设计和工艺中存在的问题，提高了成品率．最后指出了今后努力的方向．
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| 关 键 词： | 功率器件 MOS结构 场效应 |
Research on a 500 V/11 A VDMOSFET |
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| Chen Ning,Zhu Changchun.Research on a 500 V/11 A VDMOSFET[J].Journal of Xi'an Jiaotong University,1998(5). |
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| Authors: | Chen Ning Zhu Changchun |
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| Abstract: | A VDMOSFET(500 V/11 A) was designed and fabricated on the basis of theoretical analysis in this paper. Furthermore, a fault analysis was performed and problems in designs and processes were solved to increase yield. Finally, further research needs were indicated. |
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| Keywords: | power device MOS structure field effect |
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