Monolithic PIN-HEMT receiver with internal equaliser for long-wavelength fibre optic communications |
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| Authors: | Yano H Aga K Kamei H Sasaki G Hayashi H |
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| Affiliation: | Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan; |
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| Abstract: | An optical receiver, in which a GaInAs PIN photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of -30.4 dBm was obtained at 1.2 Gbit/s and 1.3 mu m wavelength.<> |
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