| SiC半导体材料和工艺的发展状况 |
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| 引用本文： | 崔晓英.SiC半导体材料和工艺的发展状况[J].电子产品可靠性与环境试验,2007,25(4):58-62. |
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| 作者姓名： | 崔晓英 |
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| 作者单位： | 信息产业部电子第五研究所,广东,广州,510610;电子元器件可靠性物理及其应用技术国家级重点实验室,广东,广州,51610 |
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| 摘 要： | 碳化硅(SiC)是一种宽禁带半导体材料,适用于制作高压、高功率和高温器件,并可以工作在直流到微波频率范围.阐述了SiC材料的性质,详细介绍了SiC器件工艺(掺杂、刻蚀、氧化及金属半导体接触)的最新进展,并指出了存在的问题及发展趋势.
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| 关 键 词： | 碳化硅器件 器件工艺 半导体材料 |
| 文章编号： | 1672-5468（2007）04-0058-05 |
Develepment of SiC and its Process |
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| CUI Xiao-ying.Develepment of SiC and its Process[J].Electronic Product Reliability and Environmental Testing,2007,25(4):58-62. |
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| Authors: | CUI Xiao-ying |
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| Affiliation: | 1. CEPREI, Guangzhou 510610, China; 2. National Key Lab for Reliability Physics and its Application Technology of Electronic Components, Guangzhou 510610, China |
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| Abstract: | SiC is a kind of wide-band semiconductor material that is suitable for producing high voltage, high power and high temperature devics. SiC devices could overate with in the range from de to microwave. In this paper, the property of SiC is presented and the resent evolution of the SiC device process is introduced in detail, including doping, etching, oxidation and metal- semiconductor contact. The problems that still exist by now are pointed out and the development tendency is discussed. |
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| Keywords: | SiC device process semiconductor material |
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