Effects of CaF2 addition on sintering behavior and microwave dielectric properties of ZnTa2O6 ceramics |
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| Authors: | Wang-Suo Xia Ling-Xia Li Ping Zhang Ping-Fan Ning |
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| Affiliation: | 1. CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Materials and Engineering, Jiangsu University of Science and Technology, Zhengjiang 2132003, China;3. School of Engineering, RMIT University, Melbourne VIC 3001, Australia;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Jiangxi Guo Chuang Industrial Park Development Co., Ltd, Ganzhou, China;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;2. Key Lab of Functional Materials for Electronic Information(B), MOE, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | Microwave dielectric ceramics ZnTa2O6 were prepared by conventional mixed oxide route. The effects of CaF2 addition on the microstructures and microwave dielectric properties of ZnTa2O6 ceramics were investigated. Formation of second phase can be detected at the high addition of CaF2 (0.5–1.0 wt.%). Variation of grain shapes were observed with CaF2 content increasing. The sintering temperature of CaF2-doped ZnTa2O6 ceramics can be effectively lowered from 1400 °C to 1225 °C due to liquid phase effect. The microwave dielectric properties were affected by the amount of CaF2 addition. At 1225 °C for 4 h, ZnTa2O6 ceramics with 0.25 wt.% CaF2 possesses excellent microwave dielectric properties: εr = 31.32, Q × ? = 73600 GHz(6.8 GHz) and τ? = ? 6.97 ppm/°C. |
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