|
|||||
|
|
| Y~(3+)掺杂ZnO压敏陶瓷的微结构和电性能研究 | |
| 引用本文： | 巫欣欣,张剑平,徐东,王艳珍,施利毅.Y~(3+)掺杂ZnO压敏陶瓷的微结构和电性能研究[J].电子元件与材料,2009,28(12). |
| 作者姓名： | 巫欣欣 张剑平 徐东 王艳珍 施利毅 |
| 作者单位： | 1. 上海大学,纳米科学与技术研究中心,上海,200444;上海大学,理学院,上海,200444 2. 上海大学,理学院,上海,200444 3. 上海大学,纳米科学与技术研究中心,上海,200444;江苏大学,材料科学与工程学院,江苏,镇江,212013 4. 上海大学,环境与化学工程学院,上海,200444 5. 上海大学,纳米科学与技术研究中心,上海,200444 |
| 基金项目： | 上海市科委技术创新人才团队建设专项资助项目，上海市教育委员会重点学科建设资助项目，上海市科委学科带头人计划资助项目 |
| 摘 要： | 采用两步烧结法制备了Y3+掺杂的(以Y(NO3)3·6H2O形式加入)ZnO压敏陶瓷,通过XRD、SEM和EDX系统研究了Y3+掺杂量对ZnO压敏陶瓷微结构和电性能的影响。结果表明:随着Y3+掺杂量的增加,电位梯度VT和非线性系数α提高,晶粒尺寸减小,施主浓度Nd和晶界态密度Ns降低,势垒宽度ω增大。当掺杂的xY(NO3)3·6H2O]为1.2%、烧结温度为1100℃时,ZnO压敏陶瓷电性能最好,其VT为675V/mm,α为63.9,漏电流IL为2.40μA。 |
| 关 键 词： | ZnO压敏陶瓷 两步烧结 稀土硝酸盐 微结构 电性能 |
Study on microstructure and electric properties of Y~(3+)-doped ZnO varistor ceramics |
|
| WU Xinxin,ZHANG Jianping,XU Dong,WANG Yanzhen,SHI Liyi.Study on microstructure and electric properties of Y~(3+)-doped ZnO varistor ceramics[J].Electronic Components & Materials,2009,28(12). | |
| Authors: | WU Xinxin ZHANG Jianping XU Dong WANG Yanzhen SHI Liyi |
| Abstract: | Y(NO_3)_3·6H_2O-doped ZnO varistor ceramics were prepared by two-step sintering method.The effects of Y(NO_3)_3·6H_2O-doped amount on the microstructure and electric properties of ZnO varistor ceramics were systematically studied by XRD,SEM and EDX.The results show that with increasing Y(NO_3)_3·6H_2O-doped amount,voltage gradient(V_T) and nonlinear coefficient (α) increase,grain size decreases,the donor number density (N_d) and density of grain boundary states (N_s) decrease,whereas barrier width(ω) increases.When xY(NO_3)_3·6H_2O] and sintering temperature are 1.2% and 1 100 ℃,respectively,obtained ZnO varistor ceramics have best electric properties: voltage gradient of 675 V/mm,nonlinear coefficient of 63.9,and leakage current of 2.40 μA. |
| Keywords: | ZnO varistor ceramic two-step sintering rare earth nitrate microstructure electrical properties |
| 本文献已被 万方数据 等数据库收录！ | |
