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Implantation of silicon ions into a surface layer of the Ti6A14V titanium alloy and its effect upon the corrosion resistance and structure of this layer
Authors:J Baszkiewicz  M Kamiiński  J Kozubowski  D Krupa  K Gosiewska  A Barcz  G Gawlik  J Jagielski
Affiliation:(1) Warsaw University of Technology, ul. Narbutta 85, 02-524 Warsaw, Poland;(2) Warsaw University of Technology, ul. Narbutta 85, 02-524 Warsaw, Poland;(3) Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland;(4) Institute of Electronics Materials Technology (IEMT), Wólczynacuteska 133, 01-919 Warsaw, Poland
Abstract:The effect of silicon ion implantation upon the corrosion resistance and structure of the surface layers formed during the implantation in the Ti6A14V titanium alloy was examined. The silicon doses were 0.5, 1.5, 3.0 and 4.5 × 1017Si+/cm2, and the ion beam energy was 100 keV. The corrosion resistance of the samples exposed to a 0.9% NaCl solution at a temperature of 37 °C was measured using electrochemical methods. The structure of the surface layers formed during the implantation was examined by a transmission electron microscope (TEM). The results of the corrosion resistance examinations have shown that the unimplanted and 0.5 × 1017Si+/cm2 implanted samples undergo uniform corrosion. At higher silicon doses, the samples show pitting corrosion. The highest corrosion resistance was shown by the alloy implanted with 0.5 × 1017Si+/cm2. It has been found that, after a long-term (1200 h) exposure to a 0.9% NaCl solution, the corrosion resistance of the samples is greater than that observed after a short-term exposure. TEM examinations have shown that, beginning from a dose of 1.5 × 1017Si+/cm2, the surface of the Ti6A14V alloy samples becomes amorphous. Heating of the 1.5 × 1017Si+/cm2 implanted samples at 200 and 500 °C does not change their structure, whereas after heating at 650 °C, the amorphous phase vanishes.
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