Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating

AlN films were prepared on Si(100) and quartz glass substrates with high deposition rate of 30 nm·min^?1 at the temperature of below 85 °C by the magnetic-filtered cathodic arc ion plating (FCAIP) method. The as-deposited AlN films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of AlN is confirmed by N1s and Al2p X-ray photoelectron spectroscopy (XPS). The XPS depth profile analysis shows that oxygen is mainly absorbed on the AlN surface. The AlN film has Al and N concentrations close to the stoichiometric ratio with a small amount of Al₂O₃. The prepared AlN films are highly transparent over the wavelength range of 210–990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale AlN films with controlled structure and good optical properties at low temperature.