Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD

Epitaxial indium oxide (In₂O₃) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In₂O₃ film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In₂O₃ (110)|MgO (110) with In₂O₃ 001]|MgO 001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In₂O₃ films is about 3.55–3.70 eV.