长脉宽脉冲激光硅片弯曲成形试验

利用毫秒脉宽Nd:YAG激光对硅片进行了弯曲试验,给出了长脉宽脉冲激光弯曲硅片的能量阈值条件。研究了长脉宽Nd:YAG激光脉冲频率和脉冲宽度参数对硅片弯曲角度的影响,同时说明了脉冲频率和脉冲宽度参数对弯曲角度的影响可以转换成扫描速度和功率密度对弯曲角度的影响,并对试验结果进行了分析,引入了脉冲占空比来表征能量的时域分布对弯曲现象的影响。试验结果表明,采用毫秒量级脉冲激光可以对硅片进行弯曲加工,弯曲角度可达20°以上。

Experimental study of bending silicon chip with

The experiment of silicon chip bending by a millisecond pulse width Nd:YAG laser was done,and the energy threshold of silicon bending was given. Meanwhile, using the Nd:YAG long pulse laser,the influence of pulse frequency and pulse width on the bending angle was mainly investigated,which could be transformed to the influence of scan velocity and power intensity on the bending angle. The pulse duty cycle was also used to describe the influence of the energy’s time distribution on bending. The experimental results indicate that the silicon chip could be bent an angle more than 20° using the Nd:YAG long pulse laser.