| 电荷耦合器件辐射损伤机理分析 |
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| 引用本文： | 唐本奇,王祖军,张勇,肖志刚,黄绍艳.电荷耦合器件辐射损伤机理分析[J].核电子学与探测技术,2004,24(6):579-581. |
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| 作者姓名： | 唐本奇 王祖军 张勇 肖志刚 黄绍艳 |
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| 作者单位： | 西北核技术研究所,陕西西安69信箱10分箱,710024;防化研究院第二研究所,北京,102205;西北核技术研究所,陕西西安69信箱,10分箱,710024 |
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| 摘 要： | 简要介绍了CCD的基本器件结构与工作机制，跟踪了国外CCD器件辐射效应方面的研究进展．分析了CCD器件电离效应和位移损伤机理．给出了国外在暗电流密度、RTS、电荷转移损失率等特征参数辐射效应的试验测试结果，以及相应的数学物理模型。
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| 关 键 词： | 电荷耦合器件 辐射效应 损伤机理 物理模型 |
| 文章编号： | 0258-0934(2004)06-0579-03 |
| 修稿时间： | 2004年3月1日 |
Analysis of radiation damage mechanism of charge coupled devices |
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| TANG Ben-qi,WANG Zu-jun,ZHANG Yong,XIAO Zhi-gang,HUANG Shao-yan.Analysis of radiation damage mechanism of charge coupled devices[J].Nuclear Electronics & Detection Technology,2004,24(6):579-581. |
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| Authors: | TANG Ben-qi WANG Zu-jun ZHANG Yong XIAO Zhi-gang HUANG Shao-yan |
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| Abstract: | In this paper, it is described about the basic structure and operation of the CCD(charge coupled device), and also investigated in the development of the studies on radiation effects on CCD. It is analyzed about the damage mechanism of ionization and displacement radiation on CCD, and showed the test results reported in references, such as dark current density , RTS and CTI, and also introduced the relative physics models. |
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| Keywords: | CCD radiation effect damage mechanism physics model |
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