Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to <Emphasis Type="Italic">n</Emphasis>-Type SiC for High-Temperature Gas Sensors

We investigated the thermal stability of Pt/TaSi _x /Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The contacts remained ohmic on lightly doped n-type (~1 × 10¹⁶ cm⁻³) 4H-SiC for over 1000 h in air at 300°C. Although a gradual increase in specific contact resistance from 3.4 × 10⁻⁴ Ω cm² to 2.80 × 10⁻³ Ω cm² was observed, the values appeared to stabilize after ~800 h of heating in air at 300°C. The contacts heated at 500°C and 600°C, however, showed larger increases in specific contact resistance followed by nonohmic behavior after 240 h and 36 h, respectively. Concentration profiles from Auger electron spectroscopy and electron energy-loss spectroscopy show that loss of ohmic behavior occurs when the entire tantalum silicide layer has oxidized.