Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor |
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| Authors: | Caroline S John Todd C Macleod Joe Evans Fat D Ho |
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| Affiliation: | 1. The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USAcsj0005@uah.edu;3. National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, USA;4. Radiant Technologies Inc., Albuquerque, New Mexico, 87107, USA;5. The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA |
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| Abstract: | The temperature effects on a ferroelectric non-volatile memory latch were measured. The device is based on a design from Radiant Technologies Inc. utilizing a discrete ferroelectric capacitor. The effects measured include functionality, I-V characteristics and retention. The range of temperatures for which the device was tested is –107°F to +302°F. The results are compared with measurements made at room temperature for the device. Retention measurements of the device at elevated temperatures allow predictions of retention performance under normal operating conditions. Potential applications of this device in harsh environments which include aerospace, industrial and automotive are presented. |
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| Keywords: | Ferroelectric capacitor non-volatile memory thermal effects |
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